Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

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dc.contributor.author Nixon, Kate Louise
dc.contributor.author Vos, M
dc.contributor.author Bowles, C
dc.contributor.author Ford, Michael J
dc.date.accessioned 2010-07-27T05:46:56Z
dc.date.available 2010-07-27T05:46:56Z
dc.date.issued 2006 en_US
dc.identifier.citation Nixon, K.L., Vos, M., Bowles, C., & Ford, M., 2006. Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface. Surface and Interface Analysis, 38(8), 1236-1241. en
dc.identifier.doi https://doi.org/10.1002/sia.2385 en
dc.identifier.issn 0142-2421 en_US
dc.identifier.rmid 2006002001 en_US
dc.identifier.uri http://hdl.handle.net/2328/8801
dc.subject.forgroup 0306 Physical Chemistry (incl. Structural en_US
dc.title Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface en_US
dc.type Article en_US
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